High energy storage performance and discharge properties of (Pb 0.98 La 0.02 )(Zr 0.45 Sn 0.55 ) 0.995 O 3 antiferroelectric (AFE) thick films with thickness of 85µm fabricated via a rolling ...
Ge, G. L. et al. Synergistic optimization of antiferroelectric ceramics with superior energy storage properties via phase structure engineering. Energy Stor. Mater. 35, …
By controlling annealing temperature, PZ thin films showed different microstructures and phase compositions, whose impact of electrical properties and energy storage performance were researched. According to the research findings, the phase composition of film presents a general rule with the decrease of annealing temperature: PZ …
Reversible field-induced phase transitions define antiferroelectric perovskite oxides and lay the foundation for high-energy storage density materials, required for future green technologies.
Antiferroelectric materials, which exhibit high saturation polarization intensity with small residual polarization intensity, are considered as the most promising dielectric energy storage materials. The energy storage properties of ceramics are known to be highly dependent on the annealing atmosphere employed in their preparation. In this study, we …
The energy storage properties of antiferroelectric (AFE) Pb0.96La0.04Zr0.98Ti0.02O3 (PLZT 4/98/2) thin films were investigated as a function of …
Rapidly developing electronics industry is striving for higher energy-storage capability dielectric capacitors for pulsed power electronic devices. Both high dielectric permittivity and high dielectric breakdown strength …
Here, typical relaxor ferroelectric Ba 2 Bi 4 Ti 5 O 18 (BBT) and antiferroelectric PbZrO 3 (PZ) were selected to form BBT/PZ/BBT composite films for high energy storage performance. The composite films exhibit relaxor antiferroelectric behavior at 1000 kV/cm. A large recoverable energy storage density (W rec) of 66.7 J/cm 3 and efficiency …
The energy storage efficiency increases from 56.8% to 74.1%, while a high energy density of ∼20 J/cm3 is maintained under an electric field of 1200 kV/cm. Additionally, the operating frequencies also have distinct influence on the hysteresis loop shape and the energy storage properties, indicating that energy storage performance of AFE thin films can be …
The effects of grain size on dielectric properties, energy-storage performance and electrocaloric effect (ECE) of Pb0.85Ba0.05La0.10(Zr0.90Ti0.10)O3 (PBLZT) antiferroelectric thick films were systematically studied. As the grain size was increased, dielectric constant of the thick films was increased, while their critical breakdown field was …
Ultimately, a recoverable energy density of 38.3 J/cm 3 and an energy storage efficiency of about 89.4% can be realized at 1.5% tensile strain and 2% defect dipole concentration. Our work provides a new idea for the preparation of antiferroelectric thin films with high energy storage density and efficiency by domain engineering modulation.
AgNbO 3-based antiferroelectric materials have attracted extensive attention in energy storage due to their double polarization-electric field hysteresis loops, but they always suffer from low breakdown strength (E b) lms with few defects and small thickness exhibit high breakdown strength, which helps to improve energy storage performance.
The scaling behavior of the energy density W of antiferroelectric films was investigated. The scaling behavior of W against frequency f of PZNT on LaNiO3-buffered Si takes the form of W ∝ f0.08 ...
The dielectric and energy-storage properties of (Pb0.97−xSrxLa0.02)(Zr0.675Sn0.285Ti0.04)O3 (x = 0, 0.005, 0.01, 0.015) bulk ceramics and thick films were investigated. All samples are orthorhombic perovskite antiferroelectric phase and have dielectric temperature relaxation property. Sr-dopant can improve the stability of the …
We report on the correlated investigation between crystal structures, field-induced phase transition, and energy storage properties of both polycrystalline and epitaxial antiferroelectric PbZrO 3 (PZO) films grown by pulsed laser deposition on Si and SrTiO 3 substrates. The structural characterization revealed the polycrystalline structure of the PZO …
Antiferroelectric PbZrO 3 (AFE PZO) films have great potential to be used as the energy storage dielectrics due to the unique electric field (E)-induced phase transition character.However, the phase transition process always accompanies a polarization (P) hysteresis effect that induces the large energy loss (W loss) and lowers the breakdown …
Antiferroelectrics have received blooming interests because of a wide range of potential applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and memory devices. Many of those applications are the most prospective in thin film form. The antiferroelectric ordering in thin films is highly sensitive to a rich set of factors, …
A 400-nm-thick (Pb 0.97 La 0.02 )(Zr 0.97 Ti 0.03 )O 3 (PLZT 2/97/3) antiferroelectric (AFE) thin films with different lead excess content (0%, 10%, and 20%) were successfully deposited on Pt(111)/TiO 2 /SiO 2 /Si substrates via a sol-gel process. The effects of lead excess content on the microstructure, dielectric properties, and energy storage …
Hu et al. found that Pb 0.96 La 0.04 Zr 0.98 Ti 0.02 O 3 antiferroelectric films have high energy storage performance [19]. Previous extensive researches have been conducted on PZ and PLZT thin films, but the researches solely focuse on the structure and properties of PZ or PLZT relaxor ferroelectric thin films. It does not explore the …
Abstract PbZrO3 and PbZrO3-based thin films as a typical antiferroelectric material have been widely studied for high-density energy storage capacitors. To prepare high-quality PbZrO3 films by the sol-gel method, it is necessary to fully understand the effects of precursor solution on the microstructure and electrical properties of the films. In this study, …
Our study elucidates correlation between AFE/FE phase transition and compressive stress, and also provides an effective way to improve the energy storage …
In this work, (111)-oriented (Pb0.99Nb0.02)(Zr, Sn, Ti)0.98O3 (PNZST) antiferroelectric thin films, which located in the tetragonal phase region (PNZSTT) and the orthorhombic phase region (PNZSTO), respectively, were successfully fabricated on platinum-buffered silicon substrates by radio-frequency magnetron sputtering technique. The …
To reveal the impact of the Al 2 O 3 layer on the energy storage performance of the nanocomposite film, we conducted a comparative study on the energy storage performance of PLSZST@AO NPs and unmodified PLSZST NPs through the unipolar D-E hysteresis loops under the 300 MV/m (Fig.6 c).
Antiferroelectric materials form a potential candidate for ceramic-based high energy storage applications owing to their low loss and high energy density. Here, we demonstrate that the antiferroelectric phase with high energy-storage properties in 0.94Bi0.5+x Na0.5−x TiO3–0.06BaTiO3 (BNTx–BT) ceramics at room-temperature is …
Antiferroelectric (AFE) thick (1 μm) films of Pb (1–3x/2) La x Zr 0.85 Ti 0.15 O 3 (PLZT) with x = 0.08, 0.10, 0.12, and 0.14 were deposited on LaNiO 3 /Si (100) substrates by a sol–gel method. The dielectric properties, …
BaTiO 3 changes nucleation mechanism and microstructure from columnar to granular, equiaxed grains.. XRD superlattice reflection and Raman spectroscopy show that NaNbO 3 is antiferroelectric up to 1–3 mol% BaTiO 3 substitution.. Energy storage properties get boosted by BaTiO 3 substitution and show good cyclic and thermal stability.
To further optimize the energy storage properties of Pb(Zr 0.92 Li 0.08)O 3 thin films, the annealing temperature was carefully adjusted. Notably, films annealed at 550℃ demonstrated significant improvement, reaching a high W rec of 29.53 J/cm 3 and η of 82.38 % under an electric field of 4000 kV/cm. Importantly, the films maintain excellent electrical …
Semantic Scholar extracted view of "Phase stability and energy storage properties of polycrystalline antiferroelectric BaTiO3-substituted NaNbO3 thin films" by Alexander M. Kobald et al. Skip to search form Skip to main content Skip to account menu
Accordingly, antiferroelectric (AFE) dielectric with double P-E hysteresis loop (i.e., P r ∼0 and high P m in field-induced ferroelectric phase), is expected to be a competitive candidate for high energy-storage capacitor applications. NaNbO 3 (NNO), one of alkaline niobates, is an AFE oxide material. Historically, the primary concern in this material was on its …
The composite films exhibit relaxor antiferroelectric behavior at 1000 kV/cm. A large recoverable energy storage density (Wrec) of 66.7 J/cm 3 and efficiency (η) of 65.6% …
Request PDF | Ultrahigh Energy Storage Properties of (PbCa)ZrO 3 Antiferroelectric Thin Films via Constructing Pyrochlore Nanocrystalline Structure | In recent years, antiferroelectric materials ...
The polarization response of antiferroelectrics to electric fields is such that the materials can store large energy densities, which makes them promising candidates for energy storage applications...
In this work, we try to increase the energy storage performance of PZO antiferroelectric films by adding NiO. The NiO-PZO composite thin films were deposited on SiO 2 /Si substrates buffered with LaNiO 3 films through the sol-gel coating technique followed by the rapid thermal annealing. We observed that the PZO films with the addition of NiO exhibited …
In this study, the high ferroelectric hysteresis loss of (Pb 0 · 93 La 0.07)(Zr 0 · 82 Ti 0.18)O 3 (PLZT 7/82/18) antiferroelectric (AFE) ceramics was reduced by employing a combinatorial approach of Mn acceptor doping followed by thick film fabrication via an aerosol deposition (AD) process. The grains of the as-deposited PLZT 7/82/18 AFE AD thick films …
Semantic Scholar extracted view of "Significantly improved energy storage properties and cycling stability in La-doped PbZrO3 antiferroelectric thin films by chemical pressure tailoring" by Henghui Cai et al.
The results indicate that PCZ thin films annealed at 550 °C crystallized into a nanocrystalline structure of the pyrochlore phase, while also displaying the highest recoverable energy density and efficiency and attribute the ultrahigh energy storage properties mainly to dramatic improvements in the electric breakdown strength caused by the dense nanocrystaline …
Energy storage capacitors occupy a large proportion in the pulse power equipment, and they play an important role nowadays. In recent years, anti‐ferroelectric materials have attracted increasing attention of researchers due to their high energy storage density. Compared with the lead‐free anti‐ferroelectric materials, PbZrO3 (PZ)‐based anti‐ferroelectric …
We attribute the ultrahigh energy storage properties mainly to dramatic improvements in the electric breakdown strength caused by the dense nanocrystalline structure. The findings reported herein help to elucidate the relationship between energy storage performance and thin-film microstructure, thereby providing an effective way for improving the …
We show that the energy-storage density of the antiferroelectric compositions can be increased by an order of magnitude, while increasing the chemical disorder transforms …
Here, antiferroelectric PbZrO 3 films were prepared by chemical solution deposition on Pt/Ti/SiO 2 /Si substrates and crystallized by microwave radiation. The effects of microwave radiation on the antiferroelectric properties and …
In this paper, we fabricated PbZrO3 (PZ) thin films by the way of sol-gel spin on LaNiO3 buffered SiO2/Si substrates, and annealed them at different given temperatures by …
Antiferroelectric (AFE) HfO 2 /ZrO 2-based thin films have recently emerged as a potential candidate for high-performance energy storage capacitors in miniaturized power electronics.However, the materials suffer from the issues of the trade-off between energy storage density (ESD) and efficiency, as well as the difficulty in scaling up of the film thickness.
Dielectric properties and energy storage capability of antiferroelectric Pb0.92La0.08Zr0.95Ti0.05O3 film-on-foil capacitors - Volume 24 Issue 9 Our systems are now restored following recent technical disruption, and we''re working hard to catch up on publishing.
